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BCP55-16,115 Datasheet
Datasheet specifications
| Datasheet's name | BCP55-16,115 |
|---|---|
| File size | 51.873 KB |
| File type | |
| Number of pages | 23 |
Download Datasheet BCP55-16,115 |
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Nexperia BCP55-16,115
- Transistor Type: NPN
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 1A
- Power Dissipation (Pd): 1.35W
- Transition Frequency (fT): 180MHz
- DC Current Gain (hFE@Ic,Vce): 100@150mA,2V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 60V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@500mA,50mA
- Package: SOT-223
- Manufacturer: Nexperia